![]() This study aimed to grow ZnS thin films on a p-type silicon wafer using chemical bath deposition method. There are many reports of successful fabrication of ZnS-based heterojunction solar cells by the chemical bath deposition method, such as with CIGS used for the n-type emitter layer. Chemical bath deposition is promising because of its low cost, arbitrary substrate shapes, simplicity, and capability of large area preparation. In recent years, ZnS thin films have been grown by a variety of deposition techniques, such as chemical bath deposition, evaporation, and solvothermal method. , which showed a very high open-circuit voltage ( V oc) value of 1.2 V and a power conversion efficiency of 0.2%. A cell with ITO/PEDOT:PSS/P3HT:ZnS/Al structure was obtained by Bredol et al. Furthermore, ZnS also offers the advantage of being a nontoxic semiconductor material (without Cd and Pb). This property makes ZnS very attractive as an absorber in heterojunction thin-film solar cells. It has a high absorption coefficient in the visible range of the optical spectrum and reasonably good electrical properties. Zinc sulfide (ZnS) was one of the first semiconductors discovered and is also an important semiconductor material with direct wide band gaps for cubic and hexagonal phases of 3.72 and 3.77 eV, respectively. Recently, 2D nanostructure P-N junctions have attracted a great deal of attention for their potential applications in photovoltaic device. ![]()
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